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PESD5V0S1BA; PESD5V0S1BB; PESD5V0S1BL
Low capacitance bidirectional ESD protection diodes
Rev. 04 -- 20 August 2009 Product data sheet
1. Product profile
1.1 General description
Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD plastic packages designed to protect one signal line from the damage caused by ESD and other transients.
Table 1. Product overview Package NXP PESD5V0S1BA PESD5V0S1BB PESD5V0S1BL SOD323 SOD523 SOD882 JEITA SC-76 SC-79 -
Type number
1.2 Features
I I I I Bidirectional ESD protection of one line Max. peak pulse power: PPP = 130 W Low clamping voltage: V(CL)R = 14 V Ultra low leakage current: IRM = 5 nA I I I I ESD protection > 30 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 12 A Ultra small SMD plastic packages
1.3 Applications
I Cellular handsets and accessories I Portable electronics I Computers and peripherals I Communication systems I Audio and video equipment
1.4 Quick reference data
Table 2. Symbol VRWM Cd Quick reference data Parameter reverse stand-off voltage diode capacitance VR = 0 V; f = 1 MHz Conditions Min Typ 35 Max 5 45 Unit V pF
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
2. Pinning information
Table 3. Pin 1 2 Pinning Description cathode 1 cathode 2
1
001aab540
Simplified outline
Symbol
SOD323, SOD523
2
1
sym045
2
SOD882 1 2 cathode 1 cathode 2
1 2 1
sym045
2
Transparent top view
3. Ordering information
Table 4. Ordering information Package Name PESD5V0S1BA PESD5V0S1BB PESD5V0S1BL SC-76 SC-79 Description plastic surface mounted package; 2 leads plastic surface mounted package; 2 leads leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm Version SOD323 SOD523 SOD882 Type number
4. Marking
Table 5. Marking codes Marking code E6 L7 F1 Type number PESD5V0S1BA PESD5V0S1BB PESD5V0S1BL
PESD5V0S1BA_BB_BL_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 20 August 2009
2 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode PPP IPP Tj Tamb Tstg
[1] [2]
Parameter peak pulse power peak pulse current junction temperature ambient temperature storage temperature
Conditions 8/20 s 8/20 s
[1][2] [1][2]
Min -65 -65
Max 130 12 150 +150 +150
Unit W A C C C
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5; see Figure 1. Measured from pin 1 to pin 2.
Table 7. ESD
ESD maximum ratings Conditions IEC 61000-4-2 (contact discharge) HBM MIL-Std 883
[1][2]
Symbol Parameter electrostatic discharge capability
Min -
Max 30 10
Unit kV kV
[1] [2]
Measured from pin 1 to pin 2. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
Table 8. Standard
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV
IEC 61000-4-2, level 4 (ESD); Figure 2 HBM MIL-STD 883; class 3
PESD5V0S1BA_BB_BL_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 20 August 2009
3 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
001aaa191
120 Ipp (%) 80 100 % Ipp; 8 s
mle218
Ipp 100 % 90 %
e-t 50 % Ipp; 20 s
40
10 % tr = 0.7 to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t
0
Fig 1.
8/20 s pulse waveform according to IEC 61000-4-5
Fig 2.
ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2
PESD5V0S1BA_BB_BL_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 20 August 2009
4 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9. Characteristics Tamb = 25 C unless otherwise specified Symbol Per diode VRWM IRM V(CL)R V(BR) rdif Cd reverse stand-off voltage reverse leakage current clamping voltage breakdown voltage differential resistance diode capacitance VRWM = 5 V; see Figure 6 IPP = 1 A IPP = 12 A IR = 1 mA IR = 1 mA VR = 0 V; f = 1 MHz; see Figure 5
[1][2] [1][2]
Parameter
Conditions
Min 5.5 -
Typ 5 35
Max 5 100 10 14 9.5 50 45
Unit V nA V V V pF
[1] [2]
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5; see Figure 1. Measures from pin 1 to pin 2.
PESD5V0S1BA_BB_BL_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 20 August 2009
5 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
103
001aaa202
1.2 PPP
001aaa193
Ppp (W)
PPP(25C) 0.8
102
0.4
10 1 10
102
103 t p (s)
104
0 0 50 100 150 Tj (C) 200
Tamb = 25 C
Fig 3.
Peak pulse power dissipation as a function of exponential time duration tp; typical values
Fig 4.
Relative variation of peak pulse power as a function of junction temperature; typical values
001aaa204
38 Cd (pF) 34
001aaa203
102 IRM(Tj) IRM(Tj =85C) 10
30
1 26
22 0 1 2 3 4 VR (V) 5
10-1 75 100 125 Tj (C) 150
Tamb = 25 C; f = 1 MHz
Fig 5.
Diode capacitance as a function of reverse voltage; typical values
Fig 6.
Relative variation of reverse leakage current as a function of junction temperature; typical values
PESD5V0S1BA_BB_BL_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 20 August 2009
6 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
ESD TESTER RZ CZ PESD5V0S1Bx IEC 61000-4-2 network CZ = 150 pF; RZ = 330
450
RG 223/U 50 coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
50
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 10 V/div horizontal scale = 50 ns/div
GND
GND
unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
clamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
vertical scale = 10 V/div horizontal scale = 50 ns/div clamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
006aaa056
Fig 7.
ESD clamping test setup and waveforms
PESD5V0S1BA_BB_BL_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 20 August 2009
7 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
7. Application information
PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may be used on lines where the signal polarities are above and below ground. They provide a surge capability of up to 130 W per line for a 8/20 s waveform.
signal line
PESD5V0S1Bx
GND
006aaa057
Fig 8.
Bidirectional protection of one signal line
Circuit board layout and protection device placement: Circuit board layout is critical for the suppression of ESD, EFT and surge transients. The following guidelines are recommended: 1. Place the protection device as close to the input terminal or connector as possible. 2. The path length between the protection device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protection conductors in parallel with unprotected conductor. 5. Minimize all printed-circuit board conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias.
PESD5V0S1BA_BB_BL_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 20 August 2009
8 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
8. Package outline
Plastic surface-mounted package; 2 leads SOD323
D
A
E
X
HD
v
M
A
Q
1
2
bp A
A1
(1)
c Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.05 bp 0.40 0.25 c 0.25 0.10 D 1.8 1.6 E 1.35 1.15 HD 2.7 2.3 Lp 0.45 0.15 Q 0.25 0.15 v 0.2
Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 REFERENCES IEC JEDEC JEITA SC-76 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16
Fig 9.
Package outline SOD323 (SC-76)
(c) NXP B.V. 2009. All rights reserved.
PESD5V0S1BA_BB_BL_4
Product data sheet
Rev. 04 -- 20 August 2009
9 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
Plastic surface-mounted package; 2 leads
SOD523
A c HE vMA
D
A
0
0.5 scale
1 mm
1 E bp
2
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.65 0.58 bp 0.34 0.26 c 0.17 0.11 D 1.25 1.15 E 0.85 0.75 HE 1.65 1.55 v 0.1
(1)
Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 EUROPEAN PROJECTION ISSUE DATE 02-12-13 06-03-16
Fig 10. Package outline SOD523 (SC-79)
PESD5V0S1BA_BB_BL_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 20 August 2009
10 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
SOD882
L
L
1
2
b
e1
A A1
E
D
(2) 0 DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e1 0.65 L 0.30 0.22 0.5 scale 1 mm
Notes 1. Including plating thickness 2. The marking bar indicates the cathode OUTLINE VERSION SOD882 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-04-16 03-04-17
Fig 11. Package outline SOD882
PESD5V0S1BA_BB_BL_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 20 August 2009
11 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
9. Packing information
Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD5V0S1BA PESD5V0S1BB PESD5V0S1BL
[1]
Package SOD323 SOD523 SOD882
Description 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -115 -115 10000 -135 -135 -315
For further information and the availability of packing methods, see Section 12.
PESD5V0S1BA_BB_BL_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 20 August 2009
12 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
10. Revision history
Table 11. Revision history Release date Data sheet status Product data sheet Change notice Supersedes PESD5V0S1BA_BB_BL_3 Document ID Modifications:
PESD5V0S1BA_BB_BL_4 20090820
* * * *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Table 3 "Pinning": amended Figure 9 "Package outline SOD323 (SC-76)": updated Figure 10 "Package outline SOD523 (SC-79)": updated Product data sheet Product data sheet Product specification Product specification PESD5V0S1BA_BB_BL_2 PESD5V0S1BA_1 PESD5V0S1BB_1 -
PESD5V0S1BA_BB_BL_3 20041217 PESD5V0S1BA_BB_BL_2 20040802 PESD5V0S1BA_1 PESD5V0S1BB_1 20040322 20040304
PESD5V0S1BA_BB_BL_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 20 August 2009
13 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
11. Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
11.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PESD5V0S1BA_BB_BL_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 20 August 2009
14 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 August 2009 Document identifier: PESD5V0S1BA_BB_BL_4

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